Silicon Raman polarizer
Year: 2012
Authors: Kozlov V.V., Wabnitz S.
Autors Affiliation: Department of Information Engineering, Università di Brescia, Via Branze 38, 25123 Brescia, Italy; Department of Physics, St.-Petersburg State University, Petrodvoretz, St. Petersburg 198504, Russian Federation
Abstract: We theoretically investigate the polarization properties of Raman amplifiers based on silicon-on-insulator waveguides, and show that it is possible to realize a waveguide Raman polarizer. The Raman polarizer is a special type of Raman amplifier with the property of producing an amplified and highly repolarized beam when it is fed by a relatively weak and unpolarized signal.
Journal/Review: OPTICS LETTERS
Volume: 37 (4) Pages from: 737 to: 739
More Information: We thank Daniele Modotto for numerous valuable discussions. This work was carried out with support from the Programma di Ricerca Scientifica di Rilevante Interesse Nazionale project \”Nonlinear cross-polarization interactions in photonic devices and systems,\” and from the Fondazione Cariplo grant No. 2009-2730KeyWords: Polarization properties; Raman amplifier; Silicon on insulator waveguide, Light amplifiers; Raman scattering; Waveguides, Optical instrumentsDOI: 10.1364/OL.37.000737ImpactFactor: 3.385Citations: 3data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2024-11-10References taken from IsiWeb of Knowledge: (subscribers only)Connecting to view paper tab on IsiWeb: Click hereConnecting to view citations from IsiWeb: Click here