Characterization of Silicon-On-Diamond chip with ionizing radiation
Year: 2014
Authors: Servoli L., Brandi F., Carzino R., Citroni M., Fanetti S., Lagomarsino S., Parrini G., Passeri D., Sciortino S., Scorzoni A.
Autors Affiliation: Sezione di Perugia, Istituto Nazionale di Fisica Nucleare, via A. Pascoli, Perugia, Italy;
Italian Institute of Technology IIT, Via Morego 30, Genova, Italy;
LENS, European Laboratory for Non-Linear Spectroscopy, Universitą\’ di Firenze, Via Nello Carrara 1, Sesto Fiorentino (FI), Italy;
Dipartimento di Fisica e Astronomia, Universitą di Firenze, Via Sansone, 1, Sesto Fiorentino (FI), Italy;
Sezione di Firenze, Istituto Nazionale di Fisica Nucleare, Via Sansone, 1, Sesto Fiorentino (FI), Italy;
Dipartimento di Ingegneria Elettronica e dell\’Informazione, Universitą di Perugia, Via Goffredo Duranti, Perugia, Italy
Abstract: In this work we report on the characterization with ionizing radiation sources of a CMOS active pixel radiation sensor (RAPS03) thinned down to 40um and bonded to a slice of diamond to form a rugged Silicon-On-Diamond structure. The bonding process is based on an innovative laser technique which scans the silicon-diamond interface with a 20 ps pulsed 355 nm laser beam. The goal of the work is to demonstrate that the bonding procedure does not damage the CMOS devices, paving the way for a possible alternative to bump bonding procedures between diamond substrates and readout chips. To this purpose, the Silicon-On-Diamond device and a standard (e.g. un-thinned) RAPS03 sensor have been tested in parallel with and without ionizing radiation sources (photons, electrons) to compare their characteristics and to study their differences. The Silicon-On-Diamond device has shown to be fully functional and no differences have been found between the responses of the two sensors, within the statistical variations due to the CMOS fabrication process.
Journal/Review: JOURNAL OF INSTRUMENTATION
Volume: 9 (4) Pages from: C04019-1 to: C04019-9
More Information: Conference: 15th International Workshop on Radiation Imaging Detectors. Location: Paris, FRANCE. Date: JUN 23-27, 2013 KeyWords: Diamond Detectors; Electronic detector readout concepts (solid-state); Radiation-hard detectors; Particle tracking detectors (Solid-state detectors)
DOI: 10.1088/1748-0221/9/04/C04019ImpactFactor: 1.399Citations: 3data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2024-11-24References taken from IsiWeb of Knowledge: (subscribers only)Connecting to view paper tab on IsiWeb: Click hereConnecting to view citations from IsiWeb: Click here
