SiCILIA-Silicon Carbide Detectors for Intense Luminosity Investigations and Applications
Year: 2018
Authors: Tudisco S., La Via F., Agodi C., Altana C., Borghi G., Boscardin M., Bussolino G., Calcagno L., Camarda M., Cappuzzello F., Carbone D., Cascino S., Casini G., Cavallaro M., Ciampi C., Cirrone G., Cuttone G., Fazzi A., Giove D., Gorini G., Labate L., Lanzalone G., Litrico G., Longo G., Lo Presti D., Mauceri M., Modica R., Moschetti M., Muoio A., Musumeci F., Pasquali G., Petringa G., Piluso N., Poggi G., Privitera S., Puglia S., Puglisi V., Rebai M., Ronchin S., Santangelo A., Stefanini A., Trifiro A., Zimbone M.
Autors Affiliation: INFN, LNS, Via S Sofia 62, I-95123 Catania, Italy; CNR, IMM, 8 Str,5, I-95121 Catania, Italy; Fdn Bruno Kessler FBK Trento, Natl Inst Nucl Phys INFN, TIFPA, Via Sommar 14, I-38123 Povo, Italy; CNR, INO, Via G Moruzzi 1, I-56124 Pisa, Italy; INFN, Sez Catania, Catania, Italy; Univ Catania, Dept Phys & Astron, Via S Sofia 64, Catania, Italy; Paul Scherrer Inst, ODRA 116, CH-5232 Villigen, Switzerland; STMicroelectronics, Str Primosole 50, I-95121 Catania, Italy; INFN, Sez Firenze, Via G Sansone 1, I-50019 Sesto Fiorentino, Italy; Univ Firenze, Dipartimento Fis, Via G Sansone 1, I-50019 Sesto Fiorentino, Italy; INFN, Sez Milano, Dept Energy, Politecn Milano, Via Celoria 16, I-20133 Milan, Italy; Univ Milano Bicocca, INFN, Dept Phys, Sez Milano Bicocca, Piazza Sci 3, I-20126 Milan, Italy; Univ Kore, Fac Ingn & Architettura, I-94100 Enna, Italy; LPE, 16 Str, I-95121 Catania, Italy; Univ Messina, Dipartimento Sci MIFT, Vle FS Alcontres 31, I-98166 Messina, Italy.
Abstract: Silicon carbide (SiC) is a compound semiconductor, which is considered as a possible alternative to silicon for particles and photons detection. Its characteristics make it very promising for the next generation of nuclear and particle physics experiments at high beam luminosity. Silicon Carbide detectors for Intense Luminosity Investigations and Applications (SiCILIA) is a project starting as a collaboration between the Italian National Institute of Nuclear Physics (INFN) and IMM-CNR, aiming at the realization of innovative detection systems based on SiC. In this paper, we discuss the main features of silicon carbide as a material and its potential application in the field of particles and photons detectors, the project structure and the strategies used for the prototype realization, and the first results concerning prototype production and their performance.
Journal/Review: SENSORS
Volume: 18 Pages from: 2289-1 to: 2289-16
More Information: This research was funded by Istituto Nazionale di Fisica Nucleare (INFN).
KeyWords: silicon carbide; nuclear and particle detector; radiation hardnessDOI: 10.3390/s18072289ImpactFactor: 3.031Citations: 53data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2024-11-24References taken from IsiWeb of Knowledge: (subscribers only)Connecting to view paper tab on IsiWeb: Click hereConnecting to view citations from IsiWeb: Click here
