High-mobility ambipolar transport in organic light-emitting transistors

Year: 2006

Authors: Dinelli F., Capelli R., Loi M.A., Murgia M., Muccini M., Facchetti A., Marks T.J.

Autors Affiliation: Consiglio Nazionale delle Ricerche (CNR) Istituto per lo Studio dei Materiali Nanostrutturati (ISMN) via P. Gobetti 101, 40129 Bologna (Italy);
Department of Chemistry and the Materials Research Center Northwestern University 2145 Sheridan Road, Evanston, IL 60208 (USA)

Abstract: Organic light-emitting transistors based on bilayered structures (see figure) exhibit balanced ambipolar transport and mobility values as large as 3 x 10(-2) cm(2) V-1 s(-1). The best performances are realized by sequentially depositing alpha,omega-dihexyl-quaterthiophene (DH4T) as p-type and N,N’-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) as n-type materials. Laser-scanning confocal microscopy allows selective imaging of the layers.

Journal/Review: ADVANCED MATERIALS

Volume: 18 (11)      Pages from: 1416  to: 1420

KeyWords: FIELD-EFFECT TRANSISTORS; THIN-FILM TRANSISTORS; PENTACENE; ELECTRONICS; SEMICONDUCTORS
DOI: 10.1002/adma.200502164

ImpactFactor: 7.896
Citations: 204
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