Torus breakdown in a two-stroke relaxation memristor
Year: 2021
Authors: Ginoux JM., Meucci R., Euzzor S., Di Garbo A.
Autors Affiliation: Aix Marseille Univ, Univ Toulon, CPT, CNRS, Marseille, France; CNR, Ist Nazl Ottica, Largo E Fermi 6, I-50125 Florence, Italy; CNR, Ist Biofis, Via G Moruzzi 1, I-56124 Pisa, Italy.
Abstract: Experimental study of a two stroke relaxation oscillator (TSO) has enabled to show that this electronic component has the same features as the so-called memristor. So, we have used the memristor’s direct current (DC) v(M) – i(M) characteristic for modeling the TSO’s DC current-voltage characteristic. This led us to confirm on one hand, that the TSO is a memristor and, on the other hand to propose a new four-dimensional autonomous dynamical system allowing to describe experimentally observed phenomena such as the transition from a limit cycle to torus breakdown. (C) 2021 Elsevier Ltd. All rights reserved.
Journal/Review: CHAOS SOLITONS & FRACTALS
Volume: 153 Pages from: 111594-1 to: 111594-10
KeyWords: Two stroke oscillator; Memristor; Uni junction transistor; Torus breakdown; Relaxation and chaotic oscillatorsDOI: 10.1016/j.chaos.2021.111594ImpactFactor: 9.922Citations: 4data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2024-09-15References taken from IsiWeb of Knowledge: (subscribers only)
