Photoluminescence of nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond at room and higher temperatures
Year: 2021
Authors: Sledz F., Piccolomo S., Flatae A.M., Lagomarsino S., Rechenberg R., Becker M.F., Sciortino S., Gelli N., Khramtsov I.A., Fedyanin D. Yu., Speranza G., Giuntini L., Agio M.
Autors Affiliation: Univ Siegen, Lab Nanoopt & C, Siegen, Germany; Fdn Bruno Kessler, Ctr Mat & Microsistemi, Trento, Italy; Ist Nazl Fis Nucl, Sez Firenze, Sesto Fiorentino, Italy; Fraunhofer USA Ctr Midwest, E Lansing, MI USA; Univ Florence, Dipartimento Fis & Astron, Sesto Fiorentino, Italy; Moscow Inst Phys & Technol, Lab Nanoopt & Plasmon, Dolgoprudnyi, Russia; Natl Res Council CNR, Natl Inst Opt INO, Florence, Italy.
Abstract: Phosphorus-doped diamond is relevant for applications in sensing, optoelectronics and quantum photonics, since the unique optical properties of color centers in diamond can be combined with the n-type conductivity attained by the inclusion of phosphorus. Here, we investigate the photoluminescence signal of the nitrogen-vacancy and silicon-vacancy color centers in phosphorus-doped diamond as a function of temperature starting from ambient conditions up to about 100◦ Celsius, focusing on the zero-phonon line (ZPL). We find that the wavelength and width of the ZPL of the two color centers exhibit a comparable dependence on tempera- ture, despite the strong difference in the photoluminescence spectra. Moreover, the temperature sensitivity of the ZPL of the silicon-vacancy center is not significantly affected by phosphorus-doping, as we infer by comparison with silicon-vacancy centers in optical-grade single-crystal diamond.
Journal/Review: Nuovo Cimento C-Colloquia and Communications in Physics
Volume: 44 (05) Pages from: 106-1 to: 106-4
More Information: The authors acknowledge funding from the University of Siegen, the German Research Association (DFG) (INST 221/118-1 FUGG, 410405168) and the Russian Foundation for Basic Research (19-57-12008). GS and SP would like to thank the Provincia Autonoma di Trento for supporting their research in the framework of Q@TN initiative on Quantum Technologies. The authors also acknowledge INFN-CHNet, the network of laboratories of the INFN for cultural heritage, for support and precious contributions in terms of instrumentation and personnel. AMF and MA would like to thank P. Reuschel and N. Soltani for experimental support.KeyWords: CVD diamond, color centers, temperature sensingDOI: 10.1393/ncc/i2021-21106-6Citations: 1data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2024-11-24References taken from IsiWeb of Knowledge: (subscribers only)Connecting to view paper tab on IsiWeb: Click here
