Silicon-vacancy color centers in phosphorus-doped diamond

Year: 2020

Authors: Flatae A.M., Lagomarsino S., Sledz F., Soltani N., Nicley S.S., Haenen K., Rechenberg R., Becker M.F., Sciortino S., Gelli N., Giuntini L., Taccetti F., Agio M.

Autors Affiliation: Univ Siegen, Lab Nanoopt & C, D-57072 Siegen, Germany; Ist Nazl Fis Nucl, Sez Firenze, I-50019 Sesto Fiorentino, Italy; Hasselt Univ, Inst Mat Res IMO, B-3590 Diepenbeek, Belgium; Hasselt Univ, IMOMEC, B-3590 Diepenbeek, Belgium; IMEC Vzw, B-3590 Diepenbeek, Belgium; Univ Oxford, Dept Mat, Parks Rd, Oxford OX1 2PH, England; Fraunhofer USA Ctr Coatings & Diamond Technol, E Lansing, MI 48824 USA; Univ Florence, Dipartimento Fis & Astron, I-50019 Sesto Fiorentino, Italy; Natl Res Council CNR, Natl Inst Opt INO, I-50125 Florence, Italy.

Abstract: The controlled creation of color centers in phosphorus-doped (n-type) diamond can facilitate the electronics integration of quantum photonics devices, such as single-photon sources operating upon electrical injection. Silicon vacancy (SiV) color centers are promising candidates, but so far the conditions for single-photon emission in phosphorus-doped diamond have not been investigated. In this study, we create SiV color centers in diamond samples with different phosphorus concentrations and show that the fluorescence background due to doping, nitrogen-impurities and ion implantation induced defects can be significantly suppressed. Single-photon emitters in phosphorus-doped diamond are obtained at low Si-ion implantation fluences.

Journal/Review: DIAMOND AND RELATED MATERIALS

Volume: 105      Pages from: 107797-1  to: 107797-7

More Information: The authors gratefully acknowledge financial support from the University of Siegen, the German Research Association (DFG) (INST 221/118-1 FUGG, 410405168), the Hasselt University Special Research Fund (BOF), the Res earch Foundation Flanders (FWO), and the Methusalem NANO network. SSN is a Newton International Fellow of the Royal Society. The authors also acknowledge INFN-CHNet, the network of laboratories of the INFN for cultural heritage, for support and precious contributions in terms of instrumentation and personnel. A.M. Flatae and M. Agio would like to thank F. Tantussi, F. De Angelis for experimental support and D. Yu. Fedyanin for helpful discussions. This work is based upon networking from the COST Action MP 1403 Nanoscale Quantum Optics, supported by COST (European Cooperation in Science and Technology).
KeyWords: diamond, diamond doping, silicon-vacancy centers
DOI: 10.1016/j.diamond.2020.107797

ImpactFactor: 3.315
Citations: 12
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