Investigation of the mode structure of InAsSb/InAsSbP lasers with respect to spectroscopic applications
Year: 1996
Authors: Popov A., Scheumann B., Mücke R., Baranov A., Sherstnev V., Yakovlev Y., Werle P.
Autors Affiliation: Ioffe Physico Technical Institute, 194021 St. Petersburg, Russian Federation; Fraunhofer Institut IFU, Kreuzeckbahnstr. 19, 82467 Garmisch-Partenkirchen, Germany
Abstract: New InAsSb diode lasers in the 3.4 µm spectral region were tested for their suitability for trace gas analysis. Selected lasers have shown single-frequency lasing over a large range of current and temperature and a cw optical power of 2 mW/facet at 82 K. The operating temperature range was 77-105 K under driving currents of 30 to 250 mA. The tuning characteristics of the investigated lasers were about 1 GHz/mA and 1.3cm-1/K.
Journal/Review: INFRARED PHYSICS & TECHNOLOGY
Volume: 37 (1) Pages from: 117 to: 121
KeyWords: Absorption spectroscopy; Heterojunctions; Laser tuning; Liquid phase epitaxy; Refractive index; Semiconducting indium compounds; Substrates; Trace analysis, Lattice mismatches; Trace gas analysis; Trace gas monitoring; Tunable diode laser absorption spectroscopy, Semiconductor lasersDOI: 10.1016/1350-4495(95)00101-8Citations: 5data from “WEB OF SCIENCE” (of Thomson Reuters) are update at: 2024-11-10References taken from IsiWeb of Knowledge: (subscribers only)Connecting to view paper tab on IsiWeb: Click hereConnecting to view citations from IsiWeb: Click here