High power InAsSb/InAsSbP double heterostructure laser for continuous wave operation at 3.6 µm

Year: 1996

Authors: Popov A., Sherstnev V., Yakovlev Y., Mücke R., Werle P.

Autors Affiliation: Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russian Federation; Fraunhofer Institut IFU, 82467 Garmisch-Partenkirchen, Germany

Abstract: High continuous wave (cw) optical output power of 10 mW has been achieved from an InAsSb diode laser at 82 K in the 3.6 µm spectral region. The threshold current has been as low as 37 mA at 82 K with a characteristic temperature of 23 K. It could be shown that in multimode operation of the InAsSb-laser the cw optical output power for a single lasing mode is limited to about 2 mW.

Journal/Review: APPLIED PHYSICS LETTERS

Volume: 68 (20)      Pages from: 2790  to: 2792

KeyWords: Continuous wave lasers; Electric currents; Heterojunctions; High power lasers; Laser modes; Liquid phase epitaxy; Quantum efficiency; Semiconducting indium compounds; Spectroscopy; Thermal effects, Continuous wave operation; Double heterostructures; Indium arsenic antimonide; Indium arsenic antimony phosphide; Threshold currents, Semiconductor lasers
DOI: 10.1063/1.116608

Citations: 42
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